收藏本站
Si8417DB
Vishay Siliconix
P-Channel 1.8 V (G-S) MOSFET
FEATURES
PRODUCT SUMMARY
? Halogen-free according to IEC 61249-2-21
V DS (V)
- 12
R DS(on) ( ? )
0.021 at V GS = - 4.5 V
0.026 at V GS = - 2.5 V
0.033 at V GS = - 1.8 V
I D (A) a
- 14.5
- 13.0
- 11.5
Q g (Typ.)
35 nC
Definition
? TrenchFET ? Power MOSFET
? Ultra Small MICRO FOOT ? Chipscale
Packaging Reduces Footprint Area,
Profile (0.62 mm) and On-Resistance Per
Footprint Area
MICRO FOOT
? Compliant to RoHS Directive 2002/95/EC
Bump Side View
Backside View
APPLICATIONS
? PA Switch
5
S
S
4
? Battery Switch
? Load Switch
6
G
S
3
S
1
D
D
2
G
Device Marking: 8417
xxx = Date/Lot Traceability Code
Ordering Information: Si8417DB-T2-E1 (Lead (Pb)-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
- 12
±8
- 14.5
Unit
V
Continuous Drain Current (T J = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
T C = 70 °C
T A = 25 °C
T A = 70 °C
T C = 25 °C
T A = 25 °C
T C = 25 °C
I D
I DM
I S
- 11.7
- 9.7 b, c
- 7.7 b, c
- 20
- 5.7
- 2.5 b, c
6.57
A
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
4.2
2.9 b, c
W
T A = 70 °C
1.86 b, c
Operating Junction and Storage Temperature Range
Package Reflow Conditions d
IR/Convection
T J , T stg
- 55 to 150
260
°C
Notes:
a. Based on T C = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Refer to IPC/JEDEC (J-STD-020), no manual or hand soldering.
e. In this document, any reference to the Case represents the body of the MICRO FOOT device and Foot is the bump.
Document Number: 73531
S11-1382-Rev. D, 11-Jul-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
SI8439DB-T1-E1 MOSFET P-CH 8V D-S MICROFOOT
SI8441DB-T2-E1 MOSFET P-CH 20V 10.5A 2X2 6MFP
SI8447DB-T2-E1 MOSFET P-CH D-S 20V MICROFOOT
SI8461DB-T2-E1 MOSFET P-CH D-S 20V MICROFOOT
SI8465DB-T2-E1 MOSFET P-CH D-S 20V MICROFOOT
SI8800EDB-T2-E1 MOSFET N-CH D-S 20V MICROFOOT
SI9407BDY-T1-E3 MOSFET P-CH 60V 4.7A 8-SOIC
SI9433BDY-T1-GE3 MOSFET P-CH D-S 20V 8-SOIC
相关代理商/技术参数
SI84-180 制造商:DELTA 制造商全称:Delta Electronics, Inc. 功能描述:SMT Power Inductor
SI84-180K 制造商:DELTA 制造商全称:Delta Electronics, Inc. 功能描述:SMT Power Inductor
SI84-181 制造商:DELTA 制造商全称:Delta Electronics, Inc. 功能描述:SMT Power Inductor
SI84-181K 制造商:DELTA 制造商全称:Delta Electronics, Inc. 功能描述:SMT Power Inductor
SI8419DB-T1-E1 功能描述:MOSFET 8.0V 11.7A 6.25W 35mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI8420 制造商:SILABS 制造商全称:SILABS 功能描述:SINGLE & DUAL-CHANNEL DIGITAL ISOLATORS
Si8420AB-C-IS 功能描述:隔离器接口集成电路 Dual Ch 2.5kV Isolator 1M 2/0 RoHS:否 制造商:Texas Instruments 通道数量:2 传播延迟时间: 电源电压-最大:5.5 V 电源电压-最小:3 V 电源电流:3.6 mA 功率耗散: 最大工作温度:+ 125 C 安装风格: 封装 / 箱体:SOIC-8 封装:Tube
Si8420AB-C-ISR 功能描述:隔离器接口集成电路 DualCh 2.5kV Isolatr 1M 2/0 RoHS:否 制造商:Texas Instruments 通道数量:2 传播延迟时间: 电源电压-最大:5.5 V 电源电压-最小:3 V 电源电流:3.6 mA 功率耗散: 最大工作温度:+ 125 C 安装风格: 封装 / 箱体:SOIC-8 封装:Tube